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| 型号 | PHM12NQ20T,518 |
| 厂商 | NXP Semiconductors |
| 描述 | MOSFET N-CH 200V 14.4A SOT685-1 |
| PHM12NQ20T,518 PDF |  |
| 代理商 | PHM12NQ20T,518 |
| 标准包装 | 2,500 |
| 系列 | TrenchMOS™ |
| FET 型 | MOSFET N 通道，金属氧化物 |
| FET 特点 | 标准 |
| 漏极至源极电压(Vdss) | 200V |
| 电流 - 连续漏极(Id) @ 25° C | 14.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 130 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大） | 4V @ 1mA |
| 闸电荷(Qg) @ Vgs | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds | 1230pF @ 25V |
| 功率 - 最大 | 62.5W |
| 安装类型 | 表面贴装 |
| 封装/外壳 | 8-VDFN 裸露焊盘 |
| 供应商设备封装 | 8-HVSON |
| 包装 | 带卷 (TR) |
| 其它名称 | 934057302518 PHM12NQ20T /T3 PHM12NQ20T /T3-ND |
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